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NTE2980 - MOSFET N-Channel Enhancement, 60V 7.7A
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NTE2980 - MOSFET N-Channel Enhancement, 60V 7.7A

NTE2980 - MOSFET N-Channel Enhancement, 60V 7.7A

$2.60
NTE2980 - MOSFET N-Channel Enhancement, 60V 7.7A—
$2.60

The Story

N-Channel Enhancement Mode MOSFET, 60V 7.7A

Reliable and Efficient N-Channel MOSFET for Everyday Projects

This N-channel enhancement mode MOSFET is designed for a wide variety of electronic projects and power switching applications. Whether you are building or repairing electronic devices, this MOSFET offers dependable performance and easy integration into your circuits.

Key Features and Benefits

  • 60V Maximum Drain-Source Voltage: Suitable for most DC circuits, ensuring compatibility with common electronic systems.
  • 7.7A Continuous Drain Current: Handles moderate power loads, ideal for small motors, lights, and switching power supplies.
  • Low RDS(on) (0.2 Ohm): Minimizes energy loss and heat, helping your projects run cooler and more efficiently.
  • 25W Maximum Power Dissipation: Provides flexibility in a variety of power and switching applications.
  • Enhancement Mode: Easy to drive with standard logic-level signals for simple control in microcontroller and DIY projects.

Why Choose This Enhancement Mode N-Channel MOSFET?

This MOSFET is a great choice for hobbyists and makers looking for a reliable, robust component at an affordable price. Its easy-to-use enhancement mode and strong ratings mean it fits well in everything from prototyping to repairs.

Technical Specifications

  • Type: N-Channel Enhancement Mode
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current: 7.7A
  • RDS(on): 0.2 Ohm
  • Maximum Power Dissipation: 25W
  • Quantity per Package: 1

Applications

  • Power switching circuits
  • DC motor controls
  • LED drivers
  • DIY electronics and prototyping
  • General purpose power management

This part is the equivalent replacement for the following:

ECG2980, IRLU014, NTE2980

Description

N-Channel Enhancement Mode MOSFET, 60V 7.7A

Reliable and Efficient N-Channel MOSFET for Everyday Projects

This N-channel enhancement mode MOSFET is designed for a wide variety of electronic projects and power switching applications. Whether you are building or repairing electronic devices, this MOSFET offers dependable performance and easy integration into your circuits.

Key Features and Benefits

  • 60V Maximum Drain-Source Voltage: Suitable for most DC circuits, ensuring compatibility with common electronic systems.
  • 7.7A Continuous Drain Current: Handles moderate power loads, ideal for small motors, lights, and switching power supplies.
  • Low RDS(on) (0.2 Ohm): Minimizes energy loss and heat, helping your projects run cooler and more efficiently.
  • 25W Maximum Power Dissipation: Provides flexibility in a variety of power and switching applications.
  • Enhancement Mode: Easy to drive with standard logic-level signals for simple control in microcontroller and DIY projects.

Why Choose This Enhancement Mode N-Channel MOSFET?

This MOSFET is a great choice for hobbyists and makers looking for a reliable, robust component at an affordable price. Its easy-to-use enhancement mode and strong ratings mean it fits well in everything from prototyping to repairs.

Technical Specifications

  • Type: N-Channel Enhancement Mode
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current: 7.7A
  • RDS(on): 0.2 Ohm
  • Maximum Power Dissipation: 25W
  • Quantity per Package: 1

Applications

  • Power switching circuits
  • DC motor controls
  • LED drivers
  • DIY electronics and prototyping
  • General purpose power management

This part is the equivalent replacement for the following:

ECG2980, IRLU014, NTE2980

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